PART |
Description |
Maker |
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
AP30G120SW AP30G120SW-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
NTE3303 NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|